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Best Journals for GaN-based semiconductor devices and materials (2026)

We track 3 journals in GaN-based semiconductor devices and materials, with an average citation rate of 1.99 and average APC of $3505.

Top 10 GaN-based semiconductor devices and materials Journals by Citation Rate

#1
Applied Physics Letters
American Institute of Physics · ISSN: 0003-6951
CR: 3.50
#2
physica status solidi (a)
Wiley · ISSN: 1862-6300
CR: 1.47
$4020
#3
Journal of the Korean Physical Society
Springer Science+Business Media · ISSN: 0374-4884
CR: 0.99
$2990

All GaN-based semiconductor devices and materials Journals

Applied Physics Letters

American Institute of Physics

0003-6951
IF 3.50
physica status solidi (a)

Wiley

1862-6300
IF 1.47

Frequently Asked Questions

The best journals for GaN-based semiconductor devices and materials are ranked by impact factor on this page. We track 3 journals in this field, with an average impact factor of 1.99.

There are currently 0 open access journals in GaN-based semiconductor devices and materials indexed in our database.

The average Article Processing Charge for GaN-based semiconductor devices and materials journals is approximately $3505 USD.
GaN-based semiconductor devices and materials at a Glance
3
Journals
0
Open Access
1.99
Avg IF
$3505
Avg APC
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