Publication & Citation Trends
Publications
0 total
A first-principles approach to closing the"10-100 eV gap"for charge-carrier thermalization in semiconductors
Cited by 2
Semantic Scholar
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$ OA
Cited by 3
Semantic Scholar
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films OA
Cited by 38
Semantic Scholar
Doping of gallium oxide and aluminum gallium oxide alloys
Cited by 2
Semantic Scholar
Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ OA
Cited by 21
Semantic Scholar
Abstract Submitted for the MAR08 Meeting of The American Physical Society Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial
Cited by 0
Semantic Scholar
Piezoelectric effect and polarization switching in Al1−xScxN OA
Cited by 55
Semantic Scholar
First-principles studies of defects, doping, and diffusion in gallium oxide (Conference Presentation)
Cited by 0
Semantic Scholar
Research Topics
GaN-based semiconductor devices and materials
(243)
Semiconductor materials and devices
(225)
ZnO doping and properties
(181)
Ga2O3 and related materials
(174)
Electronic and Structural Properties of Oxides
(142)
Affiliations
Rutgers, The State University of New Jersey
Northwestern University
Santa Barbara City College
Lawrence Livermore National Laboratory
United States Naval Research Laboratory